This article is cited in 6 papers

Optical properties

A systematic methodology for the analysis of multicomponent photoreflectance spectra applied to GaAsBi|GaAs structure

I. Guizani^a, H. Fitouri^b, I. Zaied^c, A. Rebey<sup>bd

a</sup> Physics Department, Faculty of Sciences and Arts in Qurayyat, Jouf University, Jouf, Saudi Arabia
^b Faculty of Sciences, Unité de Recherche sur les Hétéro-Epitaxies et Applications, University of Monastir, 5019 Monastir, Tunisia
^c Department of Physics Faculty of Science Albaha University, Saudi Arabia
^d Department of Physics, College of Science, Qassim University, PO Box 6622, Buraidah, Qassim, Saudi Arabia

Abstract: The multicomponent responses of photoreflectance spectrum is experimentally studied using selective phase analysis. After several experimental tests, the phase diagram of vanadium- doped GaAs|GaAs in region of fundamental energy shows only one component. On the other hand, the PR spectrum of GaAsBi|GaAs structure reveals at least two contributions relative to fundamental band–band transition and FKO for GaAs and/or GaAsBi layers. A successful separation of different components is realized by the help of adequate phase angle. We seem that the separation of contributions is useful to extract the values of the physical parameters for each region of the studied structure. We have detailed the methodology and the experimental procedure to identify each contribution.

Keywords: photoreflectance, phase analysis, multicomponent, GaAsBi.

Received: 28.10.2019
Revised: 18.11.2019
Accepted: 21.01.2020

Language: English

 English version: Physics of the Solid State, 2020, 62:6, 1060–1066