Surface physics, thin films

Surface morphological instability of silicon (100) crystals under microwave ion physical etching

R. K. Yafarov, V. Ya. Shanygin

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences

Abstract: This paper presents the results of studies of the dynamics of relaxation modification of the morphological characteristics of atomically clean surfaces of silicon (100) crystals with different types of conductivity after microwave ion physical etching in an argon atmosphere. For the first time, the effect of the electronic properties on the morphological characteristics and the surface free energy of silicon crystals is experimentally shown and proven by physicochemical methods.

Keywords: Contact Angle, Silicon Wafer, Surface Free Energy, Clean Surface, Excess Free Energy.

Received: 02.06.2015

 English version: Physics of the Solid State, 2016, 58:2, 360–363

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