Semiconductors

$^{29}$Si nuclear spin relaxation in microcrystals of plastically deformed Si: B samples

O. V. Koplak^a, R. B. Morgunov<sup>ab

a</sup> Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
^b Moscow State University of Railway Communications

Abstract: Single crystals and microcrystals Si: B enriched with $^{29}$Si isotopes have been studied using nuclear magnetic resonance and electron paramagnetic resonance (EPR) in the temperature range from 300 to 800 K. It has been found that an increase in the temperature from 300 to 500 K leads to a change in the kinetics of the relaxation of the saturated nuclear spin system. At 300 K, the relaxation kinetics corresponds to direct electron–nuclear interaction with inhomogeneously distributed paramagnetic centers introduced by the plastic deformation of the crystals. At 500 K, the spin relaxation occurs through the nuclear spin diffusion and electron–nuclear interaction with an acceptor impurity. It has been revealed that the plastic deformation affects the EPR spectra at 9 K.

Keywords: Nuclear Magnetic Resonance, Nuclear Magnetic Resonance Spectrum, Nuclear Spin, Paramagnetic Center, Spin Diffusion.

Received: 26.03.2015
Revised: 09.06.2015

 English version: Physics of the Solid State, 2016, 58:2, 240–246

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