This article is cited in 9 papers

Surface physics, thin films

Epitaxial growth of cadmium sulfide films on silicon

V. V. Antipov^ab, S. A. Kukushkin^ac, A. V. Osipov<sup>ac

a</sup> Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b State Technological Institute of St. Petersburg (Technical University)
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: A 300-nm-thick cadmium sulfide epitaxial layer on silicon was grown for the first time. The grown was performed by the method of evaporation and condensation in a quasi-closed volume at a substrate temperature of 650$^\circ$C and a growth time of 4 s. In order to avoid a chemical reaction between silicon and cadmium sulfide (at this temperature, the rate constant of the reaction is $\sim$10$^3$) and to prevent etching of silicon by sulfur, a high-quality silicon carbide buffer layer $\sim$100 nm thick was preliminarily synthesized by the substitution of atoms on the silicon surface. The ellipsometric, Raman, electron diffraction, and trace element analyses showed a high structural perfection of the CdS layer and the absence of a polycrystalline phase.

Keywords: Epitaxial Layer, Epitaxial Film, Cadmium Sulfide, Polycrystalline Phase, Topochemical Reaction.

Received: 17.06.2015
Revised: 03.08.2015

 English version: Physics of the Solid State, 2016, 58:3, 629–632

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