Abstract:
Temperature dependences of the galvanomagnetic properties of films of bismuth and Bi$_{100-x}$Sb$_{x}$ ($x\le$ 12) on substrates with different temperature expansion coefficients were studied in the temperature range of 77–300 K. The block films were prepared through thermal deposition, and single-crystal Bi$_{100-x}$Sb$_{x}$ were grown by zone recrystallization under a coating. It was found that the temperature expansion coefficient of a substrate substantially influenced the galvanomagnetic properties of Bi and Bi$_{100-x}$Sb$_{x}$ films. Using the experimental data, the change in the charge-carrier concentration in the Bi and Bi$_{100-x}$Sb$_{x}$ films on different substrates at 77 K was estimated.
Keywords:Bismuth, Polyimide, Hall Coefficient, Charge Carrier Concentration, Uniaxed Deformation.