PHYSICS

Behavior of monoatomic steps on silicon $(\mathrm{III})$ surface during the sublimation under conditions of the electric current heating

A. V. Latyshev, A. L. Aseev, A. B. Krasil'nikov, A. V. Rzhanov, S. I. Stenin

Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk

UDC: 537.533.35+537.31.33+539.211