This article is cited in 1 paper

PHYSICS

Shift of the absorption edge in irradiated amorphous silicon nitride

V. A. Gritsenko, A. V. Rzhanov, S. P. Sinitsa, V. I. Fedchenko, G. N. Feofanov

Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk

UDC: 666.11.01:539.22:535.2

Received: 24.04.1985