N. N. Sirota, A. A. Sidorov, “Temperature dependence of the intensity of diffraction maxima in roentgenograms of semiconductor compounds $\mathrm{GaAs}$, $\mathrm{InAs}$, $\mathrm{InP}$ in the $7$–$310$ K temperature range”, Dokl. Akad. Nauk SSSR, 1985, Volume 280, Number 2,Pages 352

PHYSICS

Temperature dependence of the intensity of diffraction maxima in roentgenograms of semiconductor compounds $\mathrm{GaAs}$, $\mathrm{InAs}$, $\mathrm{InP}$ in the $7$–$310$ K temperature range

N. N. Sirota^a, A. A. Sidorov^b

^a Moscow Institute of Irrigation
^b I. G. Petrovsky Bryansk State Pedagogical Institute

UDC: 548.732

Received: 20.04.1984