The formation of Pd-Si multilayer interface during heat treatment

P. N. Krilov^a, A. B. Fedotov^b, I. V. Fedotova<sup>a

a</sup> Udmurt State University, Izhevsk, Russia
^b Nizhny Novgorod Technical University n.a. R.E. Alekseev, N. Novgorod, Russia

Abstract: By reflection electromyography method combined with the layer chemical etching the structure subjected to heat treatment in temperature range of 330-870 K of Pd-Si multilayer interface have been investigated. It is shown that the intermediate layer is appearing in the phase transition interface. This layer is consist of amorphous region and bordering to them elastostrained region silicon with nana-meter thickness. The overall thickness of intermediate layer is determined by the heat treatment temperature. The model of three-phase amorphization is suggested.

Keywords: boundary, heat treatment, transition layer, the model of amorphization.

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