S. I. Kasatkin, A. M. Murav'ev, N. V. Plotnikova, V. V. Amelichev, A. I. Galushkov, I. A. Gamarts, V. V. Lopatin, A. N. Saurov, “Anisotropic magnetoresistive sensors of the magnetic field and current”, Avtomat. i Telemekh., 2009, Issue 6,Pages <nobr>141

This article is cited in 10 papers

Technical Tools in Control

Anisotropic magnetoresistive sensors of the magnetic field and current

S. I. Kasatkin^a, A. M. Murav'ev^a, N. V. Plotnikova^a, V. V. Amelichev^b, A. I. Galushkov^b, I. A. Gamarts^b, V. V. Lopatin^b, A. N. Saurov^b

^a Trapeznikov Institute of Control Sciences, Russian Academy of Sciences, Moscow, Russia
^b Scientific-Production Complex (SPC) "Technological Center" Moscow Institute of Electronic Technology (MIET), Moscow, Russia

Abstract: Results are presented of the work in the domain of investigation and production of thin-filmed anisotropic magnetoresistive sensors (AMRSs) of the magnetic field and current on the basis of the single-layer or the double-layer metallic ferromagnetic nanostructure with a thickness of the magnetic film of 12–25 nm. The problems of design of the AMRS structures and their efficiency are considered with the investigation of the basic characteristics and technology of their production.

PACS: 42.81.Pa

Presented by the member of Editorial Board: B. V. Lunkin

Received: 18.03.2008